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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5200 DESCRIPTION *High Current Capability *High Power Dissipation *High Collector-Emitter Breakdown Voltage: V(BR)CEO= 230V(Min) *Complement to Type 2SA1943 APPLICATIONS *Power amplifier applications *Recommend for 100W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w scs .i w VALUE 230 230 5 15 1.5 150 UNIT .cn mi e V V V A A IC Collector Current-Continuous IB B Base Current-Continuous Collector Power Dissipation @ TC=25 Junction Temperature PC W TJ 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC5200 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 230 V VCE(sat) Collector-Emitter Saturation Voltage IC= 8.0A; IB= 0.8A 3.0 V VBE(on) Base-Emitter On Voltage IC= 7A ; VCE= -5V 1.5 V ICBO Collector Cutoff Current VCB= 230V ; IE=0 5 A IEBO Emitter Cutoff Current VEB= 5V; IC=0 5 A hFE-1 DC Current Gain IC= 1A ; VCE= 5V hFE-2 DC Current Gain COB Output Capacitance fT Current-Gain--Bandwidth Product hFE-1 Classifications R 55-110 O 80-160 w w scs .i w IC= 7A ; VCE= 5V IE=0 ; VCB= 10V;ftest= 1.0MHz .cn mi e 55 35 160 200 pF IC= 1A ; VCE= 5V 30 MHz isc Websitewww.iscsemi.cn 2 INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5200 w w scs .i w .cn mi e isc Websitewww.iscsemi.cn |
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